English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | RAM |
| 技术: | MRAM (Magnetoresistive RAM) |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 35ns |
| 访问时间: | 35 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29GL064N90FFIS40Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
93LC56BT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DFN |
|
S29JL032J70TFI320Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
93LC46B-E/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
CY7C1548KV18-400BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS43TR82560DL-125KBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 78TWBGA |
|
71V416YFS15BEIRochester Electronics |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
FT24C02A-KTG-TFremont Micro Devices |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
71V65603S133BQG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
IS46DR16640C-3DBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
R1LV0108ESA-5SI#B0Rochester Electronics |
STANDARD SRAM, 128KX8, 55NS |
|
CY7S1049G30-10VXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
CY62148DV30LL-7OZSXIRochester Electronics |
STANDARD SRAM, 512KX8, 70NS |
