类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, Standard |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 333 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.3V ~ 2.7V, 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FPBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25LC160AT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8MSOP |
|
CY7C1312TV18-167BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
S29GL032N90BFI030ARochester Electronics |
IC FLASH 32MBIT PARALLEL 48FBGA |
|
CY14V101NA-BA25XIRochester Electronics |
IC NVSRAM 1MBIT PARALLEL 48FBGA |
|
AT25SF161B-SSHB-BAdesto Technologies |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
AS6C1008-55STINLTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32STSOP |
|
24LC024-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
W989D6DBGX6IWinbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 54VFBGA |
|
93L425DMQB40Rochester Electronics |
STANDARD SRAM, 1KX1, 40NS, TTL |
|
S25FL128SDSMFV000Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
CY7C1354C-166BGCRochester Electronics |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
IS62WV20488BLL-25MLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PAR 48MINIBGA |
|
W9816G6JB-6 TRWinbond Electronics Corporation |
IC DRAM 16MBIT PARALLEL 60VFBGA |