类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 8Gb (512M x 16) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-FBGA (9x13.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V416L10BERochester Electronics |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
IS49RL36160-093EBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |
|
CAT28LV65P-15Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 28DIP |
|
93AA46AT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
CAT24WC04JRochester Electronics |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
MX29GL512FUT2I-11GMacronix |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
AS4C8M16D1-5BCNAlliance Memory, Inc. |
IC DRAM 128MBIT PARALLEL 60TFBGA |
|
UPD44645362AF5-E40-FQ1-ARochester Electronics |
STANDARD SRAM, 2MX36, 0.45NS |
|
CY7C1020D-10ZSXICypress Semiconductor |
IC SRAM 512KBIT PAR 44TSOP II |
|
CY7S1041GE30-10BVXICypress Semiconductor |
NO WARRANTY |
|
S25FL256SAGMFVG01Rochester Electronics |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
AS7C256A-12TCNTRAlliance Memory, Inc. |
IC SRAM 256KBIT PAR 28TSOP I |
|
70V24L35PFGRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |