类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 1200 V |
电流 - 平均整流 (io): | 50A (DC) |
电压 - 正向 (vf) (max) @ if: | 1.5 V @ 50 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | 800 ns |
电流 - 反向泄漏@ vr: | 10 mA @ 600 V |
电容@vr, f: | - |
安装类型: | Chassis Mount |
包/箱: | POW-R-BLOK™ Module |
供应商设备包: | POW-R-BLOK™ Module |
工作温度 - 结: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
US1D/1Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
|
MBRB745HE3/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 7.5A TO263AB |
|
RGP02-16E-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GP 1.6KV 500MA DO204AL |
|
D2015LWickmann / Littelfuse |
DIODE GEN PURP 600V 9.5A TO220 |
|
MGR1605-BPMicro Commercial Components (MCC) |
DIODE GPP TO-220AC |
|
APD340VGTR-G1Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 3A DO15 |
|
1N4003G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO204AL |
|
NXPSC10650BJWeEn Semiconductors Co., Ltd |
DIODE SCHOTTKY 650V 10A D2PAK |
|
BYW29G-200-TRSTMicroelectronics |
DIODE GEN PURP 200V 8A D2PAK |
|
EGF1DHE3/67AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214BA |
|
HERAF1002G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 10A ITO220AC |
|
VSKE250-12Vishay General Semiconductor – Diodes Division |
DIODE GP 1.2KV 250A MAGNAPAK |
|
ES2DA-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 200V 2A SMA |