类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
晶体管型: | LDMOS (Dual), Common Source |
频率: | 2.3GHz ~ 2.4GHz |
获得: | 17dB |
电压测试: | 28 V |
额定电流(安培): | 18A |
噪声系数: | - |
电流测试: | 650 mA |
功率输出: | 12W |
额定电压: | 65 V |
包/箱: | SOT-1121A |
供应商设备包: | LDMOST |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BLF6G22-180PN,112Ampleon |
RF FET LDMOS 65V 17DB SOT539A |
|
MMRF1008HSR5NXP Semiconductors |
FET RF 100V 1.03GHZ NI-780S |
|
MRF6S18140HR3NXP Semiconductors |
FET RF 68V 1.88GHZ NI880 |
|
BF1201,215NXP Semiconductors |
MOSFET 2N-CH 10V 30MA SOT143B |
|
BLF8G27LS-140V,118Ampleon |
RF FET LDMOS 65V 17.4DB SOT1120B |
|
MRFE6S9160HR5NXP Semiconductors |
FET RF 66V 880MHZ NI-780 |
|
MRF373ALR1NXP Semiconductors |
FET RF 70V 860MHZ NI-360 |
|
J304_D26ZSanyo Semiconductor/ON Semiconductor |
JFET N-CH 30V 15MA TO92 |
|
MRF8S21200HR5NXP Semiconductors |
FET RF 2CH 65V 2.14GHZ NI1230H |
|
BLF6G10L-40BRN,118Ampleon |
RF FET LDMOS 65V 23DB SOT1112A |
|
2SK1215IGETL-ERochester Electronics |
RF N-CHANNEL MOSFET |
|
MRF8S21200HR6Rochester Electronics |
RF 2-ELEMENT, S BAND, N-CHANNEL |
|
IGN2729M400R2Integra Technologies |
GAN, RF POWER TRANSISTOR, S-BAND |