类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 256Mb (16M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS49NLC96400-33BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
93LC66XT/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
MT29F128G08CFAAAWP-Z:A TRMicron Technology |
IC FLASH 128GBIT PAR 48TSOP I |
|
MT29F128G08EBCDBJ4-37ES:D TRMicron Technology |
IC FLASH 128GBIT PAR 132VBGA |
|
CY62137CVSL-70BAXITCypress Semiconductor |
IC SRAM 2MBIT PARALLEL 48FBGA |
|
AT49LV002T-12TIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
MT53E256M32D2DS-046 AUT:BMicron Technology |
IC DRAM 8GBIT 2.133GHZ 200WFBGA |
|
MT48LC8M16LFB4-8 IT:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
MT48LC4M32B2TG-6A:LAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 86TSOP II |
|
AT49F002NT-70VCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32VSOP |
|
AT49BV001AN-55TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
IS61LV25616AL-10BIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
7132SA100JRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |