类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 2Gb (128M x 16) |
内存接口: | Parallel |
时钟频率: | 667 MHz |
写周期时间 - 字,页: | - |
访问时间: | 20 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 78-VFBGA |
供应商设备包: | 78-VFBGA (10.5x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53D384M32D2DS-053 WT ES:C TRMicron Technology |
IC DRAM 12GBIT 1866MHZ 200WFBGA |
|
AT25HP512-10PI-1.8Roving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 10MHZ 8DIP |
|
AT25160-10PC-1.8Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8DIP |
|
IS61LF51236A-7.5B3LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
NM93C86AM8Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT SPI 1MHZ 8SO |
|
IS49NLS18160-25BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144FCBGA |
|
EDB1332BDPC-1D-F-DMicron Technology |
IC DRAM 1GBIT PARALLEL 134VFBGA |
|
S29GL256P10FFI023Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
BQ4016YMC-70Texas Instruments |
IC NVSRAM 8MBIT PAR 36DIP MODULE |
|
W29GL128PH9B TRWinbond Electronics Corporation |
IC FLSH 128MBIT PARALLEL 64LFBGA |
|
AT24C01B-TH-BRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8TSSOP |
|
FT24C08A-USR-BFremont Micro Devices |
IC EEPROM 8KBIT I2C 1MHZ 8SOP |
|
IDT71V3557SA80BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |