RF MOSFET HEMT 50V 440223
IC DRAM 1GBIT PARALLEL 60WBGA
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR2 |
内存大小: | 1Gb (128M x 8) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 400 ps |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-WBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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