类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND (SLC) |
内存大小: | 2Gb (256M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1021B-12ZXCTCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
IS42S16400D-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |
|
IS45S32800D-6BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
W25Q64JVSSJM TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
MT46V32M16TG-5B:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
AT49F002T-70PIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32DIP |
|
JS28F00AM29EWHEMicron Technology |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
IS42VM32200K-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
AT28C010-15JU-235Roving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32PLCC |
|
S-24CS02ADP-GABLIC U.S.A. Inc. |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
71V432S5PFGI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
AT24C164-10PIRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 400KHZ 8DIP |
|
RC28F256K3C120Micron Technology |
IC FLASH 256MBIT PAR 64EASYBGA |