类型 | 描述 |
---|---|
系列: | SpiFlash® |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 16Mb (2M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 50 MHz |
写周期时间 - 字,页: | 50µs, 3ms |
访问时间: | - |
电压 - 电源: | 2.3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WDFN Exposed Pad |
供应商设备包: | 8-WSON (6x5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71V3577SA80BQGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
MT47H256M4B7-5E:AMicron Technology |
IC DRAM 1GBIT PARALLEL 92FBGA |
|
JS28F128J3D75B TRMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
MT53D384M32D2DS-053 AUT:C TRMicron Technology |
IC DRAM 12GBIT 1866MHZ 200WFBGA |
|
AT27LV256A-70TCRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28TSOP |
|
MT46V64M4P-5B:MMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
MT46V32M16TG-6T:FMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
SST39VF512-70-4C-NHE-TRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32PLCC |
|
EDB5432BEBH-1DAUT-F-R TRMicron Technology |
IC DRAM 512MBIT PAR 134VFBGA |
|
IDT71V3559SA80BQGI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IDT71T75602S100PF8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
STK14C88-3NF35ITRCypress Semiconductor |
IC NVSRAM 256KBIT PAR 32SOIC |
|
M45PE80-VMP6TG TRMicron Technology |
IC FLASH 8MBIT SPI 75MHZ 8VDFPN |