类型 | 描述 |
---|---|
系列: | SpiFlash® |
包裹: | Tube |
零件状态: | Discontinued at Digi-Key |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8) |
内存接口: | SPI - Quad I/O, QPI |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | 50µs, 3ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WDFN Exposed Pad |
供应商设备包: | 8-WSON (8x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DS28CZ04G-4+Maxim Integrated |
IC EEPROM 4KBIT I2C 12TQFN |
|
71342LA35PF8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 64TQFP |
|
AT27C2048-55VIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 40VSOP |
|
MT48LC16M8A2P-6A AIT:L TRMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
|
MT46H4M32LFB5-6 IT:KMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
IDT71V67603S133PFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
MT29F2G16AADWP:D TRMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
NAND08GAH0BZA5EMicron Technology |
IC FLSH 8GBIT MMC 52MHZ 169LFBGA |
|
MT29F1G08ABBEAH4-AITX:EMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
IS61QDB22M18A-250M3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
EDB5432BEPA-1DAAT-F-R TRMicron Technology |
IC DRAM 512MBIT PAR 168WFBGA |
|
W25Q64FVSSJQWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
AT29LV512-15JCRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32PLCC |