类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V631S12PRFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 128TQFP |
|
AT93C46-10PC-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
MT28F800B5WG-8 BETMicron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP I |
|
71V25761S166BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
R1EX24016ASAS0I#S0Renesas Electronics America |
IC EEPROM 16KBIT I2C 400KHZ 8SOP |
|
DS1250YP-70Maxim Integrated |
IC NVSRAM 4MBIT PAR 34PWRCAP |
|
MT48LC4M16A2P-7E:J TRMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
IDT71V432S10PFGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
EDB1316BDBH-1DAAT-F-R TRMicron Technology |
IC DRAM 1GBIT PARALLEL 134VFBGA |
|
MT45W4MW16BBB-706 L WTMicron Technology |
IC PSRAM 64MBIT PARALLEL 54VFBGA |
|
AT49F002T-70JIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
71421SA55JRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
IS42S16800E-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |