类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Discontinued at Digi-Key |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 550 ns |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT93C46R-10SC-2.5Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
AT49F040A-55JI-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
AT24C256W-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8SOIC |
|
IS42RM32800D-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
70914S20PF8Renesas Electronics America |
IC SRAM 36KBIT PARALLEL 80TQFP |
|
IS61VPS51236A-250B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
7025S17JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
IS42S16400F-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
70121L35J8Renesas Electronics America |
IC SRAM 18KBIT PARALLEL 52PLCC |
|
MT29F256G08CEEABH6-12:A TRMicron Technology |
IC FLASH 256GBIT PAR 152VBGA |
|
NM27C010T200Sanyo Semiconductor/ON Semiconductor |
IC EPROM 1MBIT PARALLEL 32TSOP |
|
AT28C64-25TIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
70V3319S166PRF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 128TQFP |