English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | GaNFET (Gallium Nitride) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 15A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 180mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 4.8V @ 500µA |
| 栅极电荷 (qg) (max) @ vgs: | 7.1 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 576 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 69W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 3-PQFN (8x8) |
| 包/箱: | 3-PowerDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
UPA2804T1L-E2-ATRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
MCB90N12-TPMicro Commercial Components (MCC) |
N-CHANNEL MOSFET, D2-PAK |
|
|
SPI16N50C3INRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
RJK03K5DPA-00#J5ARochester Electronics |
N-CHANNEL POWER SWITCHING MOSFET |
|
|
BTS244ZE3062ANTMA1Rochester Electronics |
BTS244 - TEMPFET, AUTOMOTIVE LOW |
|
|
NVMFSC0D9N04CLSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 50A/316A 8DFN |
|
|
NTP360N80S3ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 13A TO220-3 |
|
|
NVTP2955GRochester Electronics |
MOSFET 60V 12A 196 |
|
|
IRF9541Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
NX602NBKS115Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
NP40N055KHE-E1-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
H5N3007FL-M0-E#T2Rochester Electronics |
MOSFET N-CH 300V 15A TO220FL |
|
|
DMN6070SY-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 4.1A SOT89-3 |
