English
简体中文
CRYSTAL 28.63636MHZ 16PF SMD
SENSOR 200PSI 1/8-27NPT 4-20MA
BOX STEEL GRAY 24"L X 17"W
GANFET N-CH 650V 25A PQFN88
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TP65H070L |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | GaNFET (Gallium Nitride) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 25A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 85mOhm @ 16A, 10V |
| vgs(th) (最大值) @ id: | 4.8V @ 700µA |
| 栅极电荷 (qg) (max) @ vgs: | 9.3 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 600 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 96W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 3-PQFN (8x8) |
| 包/箱: | 3-PowerDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
UJ3C065030K3SUnitedSiC |
MOSFET N-CH 650V 85A TO247-3 |
|
|
IRFF9132Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
STB8N50ET4Rochester Electronics |
NFET D2PAK SPCL 500V TR |
|
|
FDMS0349Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
|
SQD40N06-14L_T4GE3Vishay / Siliconix |
MOSFET N-CH 60V 40A TO252AA |
|
|
MSC060SMA070B4Roving Networks / Microchip Technology |
TRANS SJT N-CH 700V 39A TO247-4 |
|
|
2SK2112-T2-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NP89N04PDK-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 90A TO263-3 |
|
|
IXTY02N120P-TRLWickmann / Littelfuse |
MOSFET N-CH 1200V 200MA TO252 |
|
|
BUK7E5R2-100E,127-NXPRochester Electronics |
PFET, 120A I(D), 100V, 0.0052OHM |
|
|
DMTH8012LPSW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 80V 53.7A PWRDI5060 |
|
|
G3R45MT17KGeneSiC Semiconductor |
SIC MOSFET N-CH 61A TO247-4 |
|
|
FDBL9406-F085T6Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 45A/240A 8HPSOF |