类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FRAM |
技术: | FRAM (Ferroelectric RAM) |
内存大小: | 4Mb (512K x 8) |
内存接口: | SPI |
时钟频率: | 50 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.8V ~ 3.6V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.209", 5.30mm Width) |
供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
R1WV3216RSD-7SI#B0Rochester Electronics |
32MB SUPERSRAM (2M X16-BIT) |
|
CG5816AATRochester Electronics |
SPECIAL |
|
HN58W241000FPIAGS0Rochester Electronics |
SERIAL 1M EEPROM |
|
71V016SA15BFG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 48FBGA |
|
SM662GEC-ACSSilicon Motion |
FERRI-EMMC BGA 100-B EMMC 5.0 ML |
|
M10042040108X0IWARRenesas Electronics America |
IC RAM 4MBIT SPI 108MHZ 8DFN |
|
AM27C010-55DIRochester Electronics |
EPROM |
|
CG7243AMRochester Electronics |
USB |
|
7052L25PFGI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 120TQFP |
|
MD28F010-25/BRochester Electronics |
MD28F010-25/B |
|
LE24L043CB-TL-TE-R-HRochester Electronics |
TWO WIRE SERIAL INTERFACE EEPROM |
|
CP7464ATRochester Electronics |
USB |
|
MT53B256M32D1TG-062 XT:CMicron Technology |
IC DRAM 8GBIT 1600MHZ |