类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 32Mb (4M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | 60µs, 12ms |
访问时间: | - |
电压 - 电源: | 1.65V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 12-XFBGA, WLCSP |
供应商设备包: | 12-WLCSP (2.39x1.77) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FM25C040ULMT8Rochester Electronics |
EEPROM, 512X8, SERIAL, CMOS |
|
CAT24C04LGIRochester Electronics |
IC EEPROM 4KBIT I2C 400KHZ 8DIP |
|
CG8406AARochester Electronics |
IC SRAM |
|
7025S25GRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PGA |
|
7027S25GRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 108PGA |
|
MD28F020-90Rochester Electronics |
FLASH, 256KX8, 90NS, CDIP32 |
|
MT25TL512BBA8E12-0AATMicron Technology |
IC FLASH 512MBIT SPI 24TPBGA |
|
MT53D384M64D4KA-046 XT:EMicron Technology |
IC DRAM 24GBIT 2133MHZ FBGA |
|
CG6306BFRochester Electronics |
SPECIAL |
|
5962-9161708MXARenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PGA |
|
MTFC16GAKAEEF-AATMicron Technology |
IC FLASH 128GBIT MMC 169TFBGA |
|
MT29F2G08ABAGAH4-AAT:G TRMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
MT29F2G16ABBGAH4-AIT:G TRMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |