类型 | 描述 |
---|---|
系列: | MX29GL |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 90ns |
访问时间: | 90 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA, CSPBGA |
供应商设备包: | 64-LFBGA, CSP (11x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT28EW512ABA1HPN-0SIT TRMicron Technology |
IC FLSH 512MBIT PARALLEL 56VFBGA |
|
MT29F4G08ABBFAM70A3WC1Micron Technology |
IC FLASH 4GBIT PARALLEL WAFER |
|
CY7C14702BCRochester Electronics |
SYNC RAM |
|
MT40A512M8SA-062E:FMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
M10042040108X0ISAYRenesas Electronics America |
IC RAM 4MBIT 108MHZ 8SOIC |
|
S29VS064RABBHI000ARochester Electronics |
PARALLEL NOR FLASH, 1.8V, 64MB |
|
5962-3829415MXARenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28CDIP |
|
CG7443AFRochester Electronics |
SPECIAL |
|
W972GG8KS-25Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 60WBGA |
|
7038L20PFGIRenesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
SMJ64C16S-35JDMRochester Electronics |
DUAL MARKED (5962-8670503RA) |
|
GD25LQ16LIGRGigaDevice |
IC FLASH 16MBIT SPI/QUAD 8WLCSP |
|
5962-8687516XARenesas Electronics America |
IC SRAM 8KBIT PARALLEL SB48 |