类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | SRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
5962-9150805MXARenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PGA |
|
MT28GU256AAA2EGC-0AATMicron Technology |
IC FLASH 256MBIT PARALLEL 64TBGA |
|
5962-8687506YARenesas Electronics America |
IC SRAM 8KBIT PARALLEL 48LCC |
|
AM27C256-90DM/BRochester Electronics |
MEMORY (EPROM) |
|
R1EX24002ATAS0A#S0Rochester Electronics |
IC EEPROM 2KBIT I2C 8TSSOP |
|
HN58W241000FPIAGS1Rochester Electronics |
SERIAL 1M EEPROM |
|
MT29F128G08CBEBBL85C3WC1-RMicron Technology |
IC FLASH 128GBIT PARALLEL DIE |
|
5962-8976404MYARenesas Electronics America |
IC SRAM 32KBIT PARALLEL 48LCC |
|
5962-8969001LARenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
7008L25GRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 84PGA |
|
CY7C1399BL-15ZCRochester Electronics |
CACHE SRAM, 32KX8, 15NS PDSO28 |
|
R1QHA3636CBG-25IB0Rochester Electronics |
36-MBIT DDR II + SRAM MEMORY |
|
MT53B256M64D2TP-062 XT:CMicron Technology |
IC DRAM 16GBIT 1600MHZ FBGA |