English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RJK1052DPB-WS#J5Renesas Electronics America |
IGBT |
|
|
IPC60N04S4L06ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 60A TDSON-8-23 |
|
|
JANTXV2N6802UMicrosemi |
MOSFET N-CH 500V 2.5A 18ULCC |
|
|
SI5476DU-T1-E3Vishay / Siliconix |
MOSFET N-CH 60V 12A PPAK |
|
|
IXTD5N100AWickmann / Littelfuse |
MOSFET N-CH 1000V 5A DIE |
|
|
JAN2N6798Microsemi |
MOSFET N-CH 200V 5.5A TO39 |
|
|
IRFC240NBIR (Infineon Technologies) |
MOSFET 200V DIE |
|
|
R6030ENZM12C8ROHM Semiconductor |
MOSFET N-CH 600V 30A TO3 |
|
|
AON6332Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 5X6 DFN |
|
|
SUD50P04-08-E3Vishay / Siliconix |
MOSFET P-CH 40V DPAK |
|
|
RSS060P05TB1ROHM Semiconductor |
MOSFET P-CH 50V 6A 8SOP |
|
|
IRFC230NBIR (Infineon Technologies) |
MOSFET 200V 9.3A DIE |
|
|
IPC60R520E6UNSAWNX6SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
