类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (256 x 16) |
内存接口: | SPI |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | - |
供应商设备包: | 8-MSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M29F032D70N6T TRMicron Technology |
IC FLASH 32MBIT PARALLEL 40TSOP |
|
S29WS128N0LBAW012Cypress Semiconductor |
IC MEMORY NOR |
|
DK281535Cypress Semiconductor |
IC GATE NOR |
|
A2C00045230 ACypress Semiconductor |
IC FLASH NOR |
|
MT53B384M32D2NP-053 WT:BMicron Technology |
IC DRAM 12GBIT 1866MHZ 200WFBGA |
|
70V07S25JRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
|
RM24C512C-LCSI-TAdesto Technologies |
IC EEPROM 512KBIT I2C 6WLCSP |
|
71V321SA25PFRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
70V9079L9PFI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
RD48F4400P0VBQE4Micron Technology |
IC FLASH 512MBIT PARALLEL 88SCSP |
|
70V24S25PFIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
MT29TZZZ8D5JKEPD-125 W.95TMicron Technology |
MLC EMMC/LPDDR3 72G |
|
EDFP164A3PD-JD-F-R TRMicron Technology |
IC DRAM 24GBIT PARALLEL 933MHZ |