类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (64 x 16) |
内存接口: | SPI |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | - |
供应商设备包: | 8-SON |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CMSMISCCypress Semiconductor |
MICROPOWER SRAM |
|
M29W128GL60ZA6EMicron Technology |
IC FLASH 128MBIT PARALLEL 64TBGA |
|
MT47H64M16NF-25E XIT:MMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
S99JL032J0100Cypress Semiconductor |
IC FLASH |
|
MT40A512M8RH-075E AAT:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
MT25TL512HAA1ESF-0AAT TRMicron Technology |
IC FLASH 512MBIT SPI 16SOP2 |
|
70914S20J8Renesas Electronics America |
IC SRAM 36KBIT PARALLEL 68PLCC |
|
S99ML02G10042SkyHigh Memory Limited |
IC GATE NAND |
|
DSQ3301-K01+TMaxim Integrated |
IC INTEGRATED CIRCUIT |
|
M29W040B55N1Micron Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
70P269L90BYGI8Renesas Electronics America |
IC SRAM 256KBIT PAR 100CABGA |
|
N25Q064A13ESEDFF TRMicron Technology |
IC FLASH 64MBIT SPI 108MHZ 8SO W |
|
MTFC16GAPALNA-AATMicron Technology |
EMMC 128G MMC5.1 J56X AAT |