类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DSQ3301-K01+TMaxim Integrated |
IC INTEGRATED CIRCUIT |
|
M29W040B55N1Micron Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
70P269L90BYGI8Renesas Electronics America |
IC SRAM 256KBIT PAR 100CABGA |
|
N25Q064A13ESEDFF TRMicron Technology |
IC FLASH 64MBIT SPI 108MHZ 8SO W |
|
MTFC16GAPALNA-AATMicron Technology |
EMMC 128G MMC5.1 J56X AAT |
|
MT29F3T08EUCBBM4-37:B TRMicron Technology |
IC FLASH 3TB PARALLEL 267MHZ |
|
IDT71T016SA12BF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 48CABGA |
|
AT25256-10UI-2.7Roving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 3MHZ 8DBGA |
|
054-51760-57Renesas Electronics America |
MEMORY SRAM |
|
MT53B1G32D4NQ-062 WT ES:DMicron Technology |
LPDDR4 32G 1GX32 FBGA QDP |
|
MTFC32GJVED-3M WTMicron Technology |
IC FLASH 256GBIT MMC 169VFBGA |
|
MT29F128G08EBCDBJ4-5M:D TRMicron Technology |
IC FLASH 128GBIT PARALLEL 200MHZ |
|
CG8207AACypress Semiconductor |
IC SRAM MICROPOWER |