English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND (SLC) |
| 内存大小: | 4Gb (512M x 8) |
| 内存接口: | SPI |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 300 µs |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C |
| 安装类型: | Surface Mount |
| 包/箱: | 8-WDFN Exposed Pad |
| 供应商设备包: | 8-WSON (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DS2430AD/T&RMaxim Integrated |
IC EEPROM 256B 1-WIRE 4FLIPCHIP |
|
|
MT29F16G16ADBCAH4:C TRMicron Technology |
IC FLASH 16GBIT PARALLEL 63VFBGA |
|
|
M29W064FB6AZA6EMicron Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
|
LH28F160S5HNS-L70Sharp Microelectronics |
IC FLASH 16MBIT PARALLEL 56SSOP |
|
|
93C56C-I/W15KRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ DIE |
|
|
MT4A1G16KNR-75:EMicron Technology |
IC SDRAM DDR4 16G 1GX16 FBGA |
|
|
25AA080D-I/W16KRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ DIE |
|
|
NAND256W3A2BE06Micron Technology |
IC FLASH 256MBIT PARALLEL WAFER |
|
|
MT46H128M16LFB7-5 AIT:B TRMicron Technology |
IC DRAM 2GBIT PARALLEL 60VFBGA |
|
|
MT53B1536M32D8QD-053 WT ES:DMicron Technology |
IC DRAM 6GBIT 1866MHZ |
|
|
7005L55JI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
|
CG7804AACypress Semiconductor |
IC PHYS 100TQFP |
|
|
M50FW080NB5TG TRMicron Technology |
IC FLASH 8MBIT PARALLEL 32TSOP |
