类型 | 描述 |
---|---|
系列: | MX29LV |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 90ns |
访问时间: | 90 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFBGA, CSPBGA |
供应商设备包: | 48-TFBGA, CSP (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53B512M32D2NP-062 AIT:C TRMicron Technology |
IC DRAM 16GBIT 1600MHZ 200WFBGA |
|
PC48F4400P0VB02F TRMicron Technology |
IC FLASH 512MBIT PAR 64EASYBGA |
|
7005S55JIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
S99-50055-03Cypress Semiconductor |
IC MEMORY FLASH NOR |
|
DS28E01P-W0M+1Maxim Integrated |
IC EEPROM MEMORY 1KB SMD TOSC |
|
MT49H16M18CFM-25:BMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
93LC46C-I/W15KRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ DIE |
|
CG8470AMTCypress Semiconductor |
IC PSOC4 |
|
EDFB164A1MA-GD-F-DMicron Technology |
IC DRAM 32GBIT PARALLEL 800MHZ |
|
MT53D1024M32D4DT-046 AUT:DMicron Technology |
IC DRAM 32GBIT 2133MHZ 200VFBGA |
|
AT24C04C-CUM-TRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8VFBGA |
|
CG8100AATCypress Semiconductor |
IC SRAM 100TQFP |
|
70V06L35J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |