English
简体中文
TVS DIODE 210V 349.5V R-6
FULLRANGE SPEAKER K 64 WP - 8 OH
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 210V |
| 电压 - 击穿（分钟）: | 233V |
| 电压 - 钳位（最大值）@ ipp: | 349.5V |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | 5000W (5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | R6, Axial |
| 供应商设备包: | R-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMF30AT1GRochester Electronics |
TRANS VOLTAGE SUPPRESSOR DIODE, |
|
8.0SMDJ33CA-T7Wickmann / Littelfuse |
TVS DIODE 8KW 33V 5%BI DO-214AB |
|
P4SMA9.1CAHM2GTSC (Taiwan Semiconductor) |
TVS DIODE 7.78V 13.4V DO214AC |
|
DF5A6.8FUTE85LFToshiba Electronic Devices and Storage Corporation |
TVS DIODE 5VWM USV |
|
P6SMB9.1A-QJ.W. Miller / Bourns |
TVS DIODE AECQ |
|
SMBJ130A M4GTSC (Taiwan Semiconductor) |
TVS DIODE 130V 209V DO214AA |
|
SMBJ10CA-TRSTMicroelectronics |
TVS DIODE 10V 21.7V SMB |
|
MMBZ6V8ALT1Rochester Electronics |
TVS DIODE 4.5VWM 9.6VC SOT23 |
|
P4SMA27CA R3GTSC (Taiwan Semiconductor) |
TVS DIODE 23.1V 37.5V DO214AC |
|
MRT100KP120CAE3Roving Networks / Microchip Technology |
TVS DIODE 120V 235V CASE 5A |
|
SMLJ48CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 48V 77.4V DO214AB |
|
SM6T30A-M3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 25.6V 41.5V DO214AA |
|
SZNUP2301MW6T1GSanyo Semiconductor/ON Semiconductor |
TVS DIODE SC88 |