English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TransZorb® |
| 包裹: | Tape & Box (TB) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 70V |
| 电压 - 击穿（分钟）: | 77.8V |
| 电压 - 钳位（最大值）@ ipp: | 113V |
| 电流 - 峰值脉冲 (10/1000µs): | 44.2A |
| 功率-峰值脉冲: | 5000W (5kW) |
| 电源线保护: | No |
| 应用: | Automotive |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | P600, Axial |
| 供应商设备包: | P600 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMBJ17AHM4GTSC (Taiwan Semiconductor) |
TVS DIODE 17V 27.6V DO214AA |
|
MX5KP14CARoving Networks / Microchip Technology |
TVS DIODE 14V 23.2V CASE 5A |
|
PTVS24VU1UPAZRochester Electronics |
DIODES NOT PHOTOSENSITIVE/LED |
|
MASMBG100AE3Roving Networks / Microchip Technology |
TVS DIODE 100V 162V DO215AA |
|
P4SMA15CA-M3/5AVishay General Semiconductor – Diodes Division |
TVS DIODE 12.8V 21.2V DO214AC |
|
MSMLJ8.5ARoving Networks / Microchip Technology |
TVS DIODE 8.5V 14.4V DO214AB |
|
SMCJ10AHR7GTSC (Taiwan Semiconductor) |
TVS DIODE 10V 17V DO214AB |
|
SMCJ15A-HRWickmann / Littelfuse |
TVS DIODE 15V 24.4V DO214AB |
|
SMBG24CA-M3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 24V 38.9V DO215AA |
|
SESD9L5.0ST5GSanyo Semiconductor/ON Semiconductor |
TVS DIODE 5V 9.8V SOD923 |
|
MRT100KP45CARoving Networks / Microchip Technology |
TVS DIODE 45V 88.5V CASE 5A |
|
MXLRT100KP110ARoving Networks / Microchip Technology |
TVS DIODE 110V 216V CASE 5A |
|
MXL5KP78AE3Roving Networks / Microchip Technology |
TVS DIODE 78V 126V CASE 5A |
