类型 | 描述 |
---|---|
系列: | 20KPA |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
类型: | Zener |
单向通道: | 1 |
双向通道: | - |
电压 - 反向间隔(典型值): | 132V |
电压 - 击穿(分钟): | 147.4V |
电压 - 钳位(最大值)@ ipp: | 213V |
电流 - 峰值脉冲 (10/1000µs): | 94.8A |
功率-峰值脉冲: | 20000W (20kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | P600, Axial |
供应商设备包: | P600 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MAP4KE43CAE3Roving Networks / Microchip Technology |
TVS DIODE 36.8V 59.3V DO204AL |
|
P6SMB15CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AA |
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SMA5J16CA-E3/61Vishay General Semiconductor – Diodes Division |
TVS DIODE 16V 26V DO214AC |
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ATV06B580JB-HFComchip Technology |
TVS DIODE 58V 93.6V DO214AA |
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1N6373HE3_A/CVishay General Semiconductor – Diodes Division |
TVS DIODE 5V 7.5V 1.5KE |
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MXSMLJ85CARoving Networks / Microchip Technology |
TVS DIODE 85V 137V DO214AB |
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VTVS28ASMF-HM3-18Vishay General Semiconductor – Diodes Division |
TVS DIODE 27.9V 47V DO219AB |
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1.5KE36CA A0GTSC (Taiwan Semiconductor) |
TVS DIODE 30.8V 49.9V DO201 |
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SZSMS24T1GSanyo Semiconductor/ON Semiconductor |
TVS DIODE 24V 44V SC74/SC59ML |
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MASMLJ6.0CARoving Networks / Microchip Technology |
TVS DIODE 6V 10.3V DO214AB |
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MXSMLJ14CAE3Roving Networks / Microchip Technology |
TVS DIODE 14V 23.2V DO214AB |
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SA64AHE3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 64V 103V DO204AC |
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MSMCG36AE3Roving Networks / Microchip Technology |
TVS DIODE 36V 58.1V DO215AB |