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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 15V |
| 电压 - 击穿（分钟）: | 16.7V |
| 电压 - 钳位（最大值）@ ipp: | 24.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 206A |
| 功率-峰值脉冲: | 5000W (5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AR, Axial |
| 供应商设备包: | DO-204AR |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMBJ5.0A-QHJ.W. Miller / Bourns |
TVS DIODE AECQ |
|
P4KE16CA R0GTSC (Taiwan Semiconductor) |
TVS DIODE 13.6V 22.5V DO204AL |
|
MPLAD30KP78AE3Roving Networks / Microchip Technology |
TVS DIODE 78V 126V PLAD |
|
TPSMC10AHE3_B/IVishay General Semiconductor – Diodes Division |
TVS DIODE 8.55V 14.5V DO214AB |
|
JANTXV1N6132AUSRoving Networks / Microchip Technology |
TVS DIODE 91.2V 165.1V B SQ-MELF |
|
SMBG6.5AHE3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 6.5V 11.2V DO215AA |
|
SM15T30A-M3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 25.6V 41.5V DO214AB |
|
10BJ160APowerStor (Eaton) |
TVS DIODE 160V 259VC 1KW DO214AA |
|
P6SMB68AHM4GTSC (Taiwan Semiconductor) |
TVS DIODE 58.1V 92V DO214AA |
|
SA6.0CA-E3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 6V 10.3V DO204AC |
|
BZW04-6V4B-E3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 6.4V 11.3V DO204AL |
|
MXL5KP60ARoving Networks / Microchip Technology |
TVS DIODE 60V 96.8V CASE 5A |
|
BZW04-26B-E3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 25.6V 41.5V DO204AL |
