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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 48V |
| 电压 - 击穿（分钟）: | 53.3V |
| 电压 - 钳位（最大值）@ ipp: | 77.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 7.7A |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AA, SMB |
| 供应商设备包: | SMBJ (DO-214AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMCG45AHE3/57TVishay General Semiconductor – Diodes Division |
TVS DIODE 45V 72.7V DO215AB |
|
ATV02W161-HFComchip Technology |
TVS DIODE 160V 259V SOD123 |
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TVP06B151A-GComchip Technology |
TVS DIODE 128V 207V SMB |
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SZ1SMB17CAT3GWickmann / Littelfuse |
TVS DIODE 17V 27.6V SMB |
|
TP1.5KE13AWickmann / Littelfuse |
TVS DIODE 11.1V 18.2V DO201 |
|
ATV30C121JB-HFComchip Technology |
TVS DIODE 120V 193V DO214AB |
|
MXSMLJ6.0AE3Roving Networks / Microchip Technology |
TVS DIODE 6V 10.3V DO214AB |
|
MASMBG110CARoving Networks / Microchip Technology |
TVS DIODE 110V 177V DO215AA |
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SMAJ28CA-HFComchip Technology |
DIODE TVS 28V 400W SMA BI-DIR |
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1N6286A-E3/51Vishay General Semiconductor – Diodes Division |
TVS DIODE 36.8V 59.3V 1.5KE |
|
PESD5V0V2BM315Rochester Electronics |
TVS DIODE |
|
SMBJ20A-TPMicro Commercial Components (MCC) |
TVS DIODE 20V 32.4V DO214AA |
|
MASMLJ33AE3Roving Networks / Microchip Technology |
TVS DIODE 33V 53.3V DO214AB |
