类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500 |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | - |
双向通道: | 1 |
电压 - 反向间隔(典型值): | 70V |
电压 - 击穿(分钟): | 77.8V |
电压 - 钳位(最大值)@ ipp: | 113V |
电流 - 峰值脉冲 (10/1000µs): | 13.3A |
功率-峰值脉冲: | 1500W (1.5kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -65°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-214AB, SMC |
供应商设备包: | DO-214AB (SMCJ) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BZW04-256HR1GTSC (Taiwan Semiconductor) |
TVS DIODE 256V 414V DO204AL |
|
ESD5Z3.3T1GSanyo Semiconductor/ON Semiconductor |
TVS DIODE 3.3V 14.1V SOD523 |
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MXLSMBJ13CARoving Networks / Microchip Technology |
TVS DIODE 13V 21.5V DO214AA |
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MXSMBJ22CARoving Networks / Microchip Technology |
TVS DIODE 22V 35.5V DO214AA |
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MSMBG7.0ARoving Networks / Microchip Technology |
TVS DIODE 7V 12V DO215AA |
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MXL5KP45CARoving Networks / Microchip Technology |
TVS DIODE 45V 72.7V CASE 5A |
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NUP3105LT1GSanyo Semiconductor/ON Semiconductor |
TVS DIODE 32V 66V SOT23-3 |
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MSMBJ36CARoving Networks / Microchip Technology |
TVS DIODE 36V 58.1V DO214AA |
|
SMBJ160CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 160V 259V DO214AA |
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GSOT04-G3-08Vishay General Semiconductor – Diodes Division |
TVS DIODE 4V 14.3V SOT23 |
|
MXLSMBG6.0ARoving Networks / Microchip Technology |
TVS DIODE 6V 10.3V DO215AA |
|
MASMBG11CAE3Roving Networks / Microchip Technology |
TVS DIODE 11V 18.2V DO215AA |
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5KP210AWickmann / Littelfuse |
TVS DIODE 210V 349.5V P600 |