English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 36V |
| 电压 - 击穿（分钟）: | 40V |
| 电压 - 钳位（最大值）@ ipp: | 58.1V |
| 电流 - 峰值脉冲 (10/1000µs): | 51.6A |
| 功率-峰值脉冲: | 3000W (3kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
5KP16AHE3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 16V 26V P600 |
|
SMBJ26CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 26V 46.6V DO214AA |
|
TPSMB22CAWickmann / Littelfuse |
TVS DIODE 18.8V 30.6V DO214AA |
|
SMCJ70CAWickmann / Littelfuse |
TVS DIODE 70V 113V DO214AB |
|
SMBG8.5CA-E3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 8.5V 14.4V DO215AA |
|
SMAJ6.0AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AC |
|
ATV06A300JB-HFComchip Technology |
AUTOMOTIVE TVS DIODE 600W 30V BI |
|
SZP6SMB24CAT3GWickmann / Littelfuse |
TVS DIODE 20.5V 33.2V SMB |
|
SMCJ16A-E3/57TVishay General Semiconductor – Diodes Division |
TVS DIODE 16V 26V DO214AB |
|
5KP20A-GComchip Technology |
TVS DIODE 20V 32.4V R-6 |
|
MXSMCJ110CARoving Networks / Microchip Technology |
TVS DIODE 110V 177V DO214AB |
|
MSMCG43CARoving Networks / Microchip Technology |
TVS DIODE 43V 69.4V DO215AB |
|
MXSMBG150ARoving Networks / Microchip Technology |
TVS DIODE 150V 243V DO215AA |
