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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 180V |
| 电压 - 击穿（分钟）: | 200V |
| 电压 - 钳位（最大值）@ ipp: | 354V |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | 100000W (100kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AR, Axial |
| 供应商设备包: | Case 5A (DO-204AR) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MSMCJ120ARoving Networks / Microchip Technology |
TVS DIODE 120V 193V DO214AB |
|
SMBJ22CA-QHJ.W. Miller / Bourns |
TVS DIODE 22V 35.5V SMB |
|
MXLSMLJ51AE3Roving Networks / Microchip Technology |
TVS DIODE 51V 82.4V DO214AB |
|
UMZU6.2NT106ROHM Semiconductor |
TVS DIODE 5.5V UMD3 |
|
SMCG33AHE3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 33V 53.3V DO215AB |
|
MXSMCJLCE17AE3Roving Networks / Microchip Technology |
TVS DIODE 17V 27.6V DO214AB |
|
MASMCJLCE20AE3Roving Networks / Microchip Technology |
TVS DIODE 20V 32.4V DO214AB |
|
3.0SMI40ATRSMC Diode Solutions |
DIODE TRANSIENT VOLTAGE SUPPRESS |
|
AK3-380C-BPMicro Commercial Components (MCC) |
TVS DIODE 380V 520V AK |
|
MXLSMBJ75CARoving Networks / Microchip Technology |
TVS DIODE 75V 121V DO214AA |
|
TP6KE22AWickmann / Littelfuse |
TVS DIODE 18.8V 30.6V DO204AC |
|
MASMBJ5.0CAE3Roving Networks / Microchip Technology |
TVS DIODE 5V 9.2V DO214AA |
|
1KSMB39CA M4GTSC (Taiwan Semiconductor) |
TVS DIODE 33.3V 53.9V DO214AA |
