类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500 |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | 1 |
双向通道: | - |
电压 - 反向间隔(典型值): | 18V |
电压 - 击穿(分钟): | 20V |
电压 - 钳位(最大值)@ ipp: | 29.2V |
电流 - 峰值脉冲 (10/1000µs): | 172A |
功率-峰值脉冲: | 5000W (5kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -65°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | DO-204AR, Axial |
供应商设备包: | Case 5A (DO-204AR) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MXP4KE30CARoving Networks / Microchip Technology |
TVS DIODE 25.6V 41.4V DO204AL |
|
3KASMC26AHE3_B/IVishay General Semiconductor – Diodes Division |
TVS DIODE 26V 42.1V DO214AB |
|
5.0SMDJ64A M6GTSC (Taiwan Semiconductor) |
TVS DIODE 64V 103V DO214AB |
|
CPDFR12VComchip Technology |
TVS DIODE 12V 25V 1005/SOD323F |
|
MSMBG60ARoving Networks / Microchip Technology |
TVS DIODE 60V 96.8V DO215AA |
|
MXLSMLJ13CARoving Networks / Microchip Technology |
TVS DIODE 13V 21.5V DO214AB |
|
P4KE51CA-GComchip Technology |
TVS DIODE 43.6V 70.1V DO41 |
|
SMLJ22E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 22V 39.4V DO214AB |
|
SMCJ36AHE3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 36V 58.1V DO214AB |
|
SZ1SMB14CAT3GWickmann / Littelfuse |
TVS DIODE 14V 23.2V SMB |
|
BZW06-48B R0GTSC (Taiwan Semiconductor) |
TVS DIODE 47.8V 100V DO204AC |
|
1KSMB16A M4GTSC (Taiwan Semiconductor) |
TVS DIODE 13.6V 22.5V DO214AA |
|
SMBG170A-M3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 170V 275V DO215AA |