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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 75V |
| 电压 - 击穿（分钟）: | 83.3V |
| 电压 - 钳位（最大值）@ ipp: | 121V |
| 电流 - 峰值脉冲 (10/1000µs): | 41A |
| 功率-峰值脉冲: | 5000W (5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AR, Axial |
| 供应商设备包: | Case 5A (DO-204AR) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MXLSMBJSAC7.0Roving Networks / Microchip Technology |
TVS DIODE 7V 12.6V DO214AA |
|
MXSMBG20AE3Roving Networks / Microchip Technology |
TVS DIODE 20V 32.4V DO215AA |
|
MP4KE170ARoving Networks / Microchip Technology |
TVS DIODE 145V 234V DO204AL |
|
SMA6F5.0A-M3/6BVishay General Semiconductor – Diodes Division |
TVS DIODE 5V 13.4V DO221AC |
|
TGL41-33A-E3/97Vishay General Semiconductor – Diodes Division |
TVS DIODE 28.2V 45.7V DO213AB |
|
MSMCG13CAE3Roving Networks / Microchip Technology |
TVS DIODE 13V 21.5V DO215AB |
|
SMBJ20CA-M3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 20V 32.4V DO214AA |
|
P4KE47CA R0GTSC (Taiwan Semiconductor) |
TVS DIODE 40.2V 64.8V DO204AL |
|
SMCJE14APowerStor (Eaton) |
TVS DIODE 14V 23.2VC 1500W SMC |
|
SZNUP2115LT1GSanyo Semiconductor/ON Semiconductor |
TVS DIODE 24V 50V SOT23-3 |
|
MRT100KP110CAE3Roving Networks / Microchip Technology |
TVS DIODE 110V 216V CASE 5A |
|
MAP4KE20CARoving Networks / Microchip Technology |
TVS DIODE 17.1V 27.7V DO204AL |
|
MXLSMBG22ARoving Networks / Microchip Technology |
TVS DIODE 22V 35.5V DO215AA |
