类型 | 描述 |
---|---|
系列: | SM6T, TransZorb® |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
类型: | Zener |
单向通道: | - |
双向通道: | 1 |
电压 - 反向间隔(典型值): | 15.3V |
电压 - 击穿(分钟): | 17.1V |
电压 - 钳位(最大值)@ ipp: | 25.2V |
电流 - 峰值脉冲 (10/1000µs): | 24A |
功率-峰值脉冲: | 600W |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -65°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-214AA, SMB |
供应商设备包: | DO-214AA (SMBJ) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MSMCJ24CARoving Networks / Microchip Technology |
TVS DIODE 24V 38.9V DO214AB |
|
SMCG100A-HRWickmann / Littelfuse |
TVS DIODE 100V 162V DO215AB |
|
SA5V0ARochester Electronics |
TRANS VOLTAGE SUPPRESSOR DIODE |
|
A5KP350A-GComchip Technology |
TVS DIODE 350V 567V R-6 |
|
MXSMBG11CAE3Roving Networks / Microchip Technology |
TVS DIODE 11V 18.2V DO215AA |
|
SA22CAHE3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 22V 35.5V DO204AC |
|
MASMCJ110CAE3Roving Networks / Microchip Technology |
TVS DIODE 110V 177V DO214AB |
|
JANTXV1N6115USRoving Networks / Microchip Technology |
TVS DIODE 18.2V 34.97V B SQ-MELF |
|
1.5KE62A-E3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 53V 85V 1.5KE |
|
5KP28A-E3/51Vishay General Semiconductor – Diodes Division |
TVS DIODE 28V 45.4V P600 |
|
SMB10J33A-M3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 33V 53.3V DO214AA |
|
SMBJ110A-HFComchip Technology |
DIODE TVS 110V 600W SMB UNI-DIR |
|
SM6S12ATHE3/IVishay General Semiconductor – Diodes Division |
TVS DIODE 12V 19.9V DO218AC |