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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 54V |
| 电压 - 击穿（分钟）: | 60V |
| 电压 - 钳位（最大值）@ ipp: | 106V |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | 100000W (100kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AR, Axial |
| 供应商设备包: | Case 5A (DO-204AR) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ESD24VS2UE6327HTSA1IR (Infineon Technologies) |
TVS DIODE 24V 41V SOT23-3 |
|
MPLAD30KP17CAE3Roving Networks / Microchip Technology |
TVS DIODE 17V 28.8V PLAD |
|
MXL5KP70AE3Roving Networks / Microchip Technology |
TVS DIODE 70V 113V CASE 5A |
|
SAC6.0-E3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 6V 11.2V DO204AC |
|
5KASMC24AHM3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE 24V 38.9V DO214AB |
|
MASMBG51ARoving Networks / Microchip Technology |
TVS DIODE 51V 82.4V DO215AA |
|
SMLJ7.0E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 7V 13.3V DO214AB |
|
SLD24-018Wickmann / Littelfuse |
TVS DIODE 24V 38.9V P600 |
|
MXSMCJ14CAE3Roving Networks / Microchip Technology |
TVS DIODE 14V 23.2V DO214AB |
|
824540581Würth Elektronik Midcom |
TVS DIODE 58V 93.6V DO214AB |
|
P4SMA30AJ.W. Miller / Bourns |
TVS DIODE 25.6V 41.4V DO214AC |
|
BZW04-44-E3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 43.6V 70.1V DO204AL |
|
P6SMB100CA R5GTSC (Taiwan Semiconductor) |
TVS DIODE 85.5V 137V DO214AA |
