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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 66.4V |
| 电压 - 击穿（分钟）: | 77.9V |
| 电压 - 钳位（最大值）@ ipp: | 113V |
| 电流 - 峰值脉冲 (10/1000µs): | 3.7A |
| 功率-峰值脉冲: | 400W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-41 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MA1.5KE56AE3Roving Networks / Microchip Technology |
TVS DIODE 47.8V 77V DO204AR |
|
SMF4L20CAWickmann / Littelfuse |
TVS DIODE SMF4L 20V BI 400W |
|
P6SMB51A-E3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 43.6V 70.1V DO214AA |
|
SM6S16ATHE3/IVishay General Semiconductor – Diodes Division |
TVS DIODE 16V 26V DO218AC |
|
MART100KP54CAE3Roving Networks / Microchip Technology |
TVS DIODE 54V 106V CASE 5A |
|
P6SMB6.8CA-E3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 5.8V 10.5V DO214AA |
|
ESDALC6V1-1BT2STMicroelectronics |
TVS DIODE 3V SOD882 |
|
TV15C7V0JB-GComchip Technology |
TVS DIODE 7V 12V DO214AB |
|
MPLAD15KP110ARoving Networks / Microchip Technology |
TVS DIODE 110V 177V PLAD |
|
SMAJE150APowerStor (Eaton) |
TVS DIODE 150V 243VC 400W SMA |
|
1.5CE13A TR PBFREECentral Semiconductor |
TVS DIODE 11.1V 18.2V DO201 |
|
MSMBG64CAE3Roving Networks / Microchip Technology |
TVS DIODE 64V 103V DO215AA |
|
SMAJ11CAHR3GTSC (Taiwan Semiconductor) |
TVS DIODE 11V 18.2V DO214AC |
