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| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, PAR® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 26V |
| 电压 - 击穿（分钟）: | 28.9V |
| 电压 - 钳位（最大值）@ ipp: | 42.1V |
| 电流 - 峰值脉冲 (10/1000µs): | 157A |
| 功率-峰值脉冲: | 6600W (6.6kW) |
| 电源线保护: | No |
| 应用: | Automotive |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-218AB |
| 供应商设备包: | DO-218AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MSMCJLCE6.5AE3Roving Networks / Microchip Technology |
TVS DIODE 6.5V 11.2V DO214AB |
|
SMCJ54Meritek |
TVS DIODE 54V 96.3V DO-214AB (SM |
|
SMF26A-M3-08Vishay General Semiconductor – Diodes Division |
TVS DIODE 26V 42.1V DO219AB |
|
1N6289A-E3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 47.8V 77V 1.5KE |
|
SMCG43A-E3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 43V 69.4V DO215AB |
|
SMBJ58E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 58V 103V DO214AA |
|
SMCG22A-E3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 22V 35.5V DO215AB |
|
MRT100KP280AE3Roving Networks / Microchip Technology |
TVS DIODE 280V 552V CASE 5A |
|
5.0SMDJ45AHM6GTSC (Taiwan Semiconductor) |
TVS DIODE 45V 72.7V DO214AB |
|
SMAJ20A-13-FZetex Semiconductors (Diodes Inc.) |
TVS DIODE 20V 32.4V SMA |
|
DF2B7AFS,L3MToshiba Electronic Devices and Storage Corporation |
TVS DIODE 5.5V 20V SOD923 |
|
SMDJ7.0A-HRWickmann / Littelfuse |
TVS DIODE 7V 12V DO214AB |
|
MXLSMCJ7.0AE3Roving Networks / Microchip Technology |
TVS DIODE 7V 12V DO214AB |
