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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 5V |
| 电压 - 击穿（分钟）: | 6.4V |
| 电压 - 钳位（最大值）@ ipp: | 9.2V |
| 电流 - 峰值脉冲 (10/1000µs): | 65.2A |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AA, SMB |
| 供应商设备包: | SMBJ (DO-214AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMBJ15CA/TR13Yageo |
TVS DIODE |
|
MSMCJ36AE3Roving Networks / Microchip Technology |
TVS DIODE 36V 58.1V DO214AB |
|
ATV15C280J-HFComchip Technology |
TVS DIODE 28V 45.4V DO214AB |
|
SMCJ6.0CAHR7GTSC (Taiwan Semiconductor) |
TVS DIODE 6V 10.3V DO214AB |
|
1.5SMC75CA-E3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 64.1V 104V DO214AB |
|
SMBJ33D-M3/IVishay General Semiconductor – Diodes Division |
TVS DIODE 33V 52.5V DO214AA |
|
P6KE130AHE3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 111V 179V DO204AC |
|
5KP60A-E3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 60V 97V P600 |
|
P4SMA10CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AC |
|
MXLSMBJ8.5AE3Roving Networks / Microchip Technology |
TVS DIODE 8.5V 14.4V DO214AA |
|
1SMC20A TR13Central Semiconductor |
TVS DIODE 20V 32.4V SMC |
|
SMCJ350CAJ.W. Miller / Bourns |
TVS DIODE 350V 567V SMC |
|
SMBJ12CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AA |
