类型 | 描述 |
---|---|
系列: | SMBJ |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
类型: | Zener |
单向通道: | 1 |
双向通道: | - |
电压 - 反向间隔(典型值): | 51V |
电压 - 击穿(分钟): | 56.7V |
电压 - 钳位(最大值)@ ipp: | 91.1V |
电流 - 峰值脉冲 (10/1000µs): | 6.59A |
功率-峰值脉冲: | 600W |
电源线保护: | - |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -55°C ~ 150°C |
安装类型: | Surface Mount |
包/箱: | DO-214AA (SMB) |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MXSMLJ85AE3Roving Networks / Microchip Technology |
TVS DIODE 85V 137V DO214AB |
|
P4KE250CAWickmann / Littelfuse |
TVS DIODE 214V 344V DO204AL |
|
SMDJ58CA-T7Wickmann / Littelfuse |
TVS DIODE 58V 93.6V DO214AB |
|
VTVS40ASMF-HM3-18Vishay General Semiconductor – Diodes Division |
TVS DIODE 39.6V 67V DO219AB |
|
15KPA90A-BWickmann / Littelfuse |
TVS DIODE 90V 145.6V P600 |
|
MXLSMCJ8.5ARoving Networks / Microchip Technology |
TVS DIODE 8.5V 14.4V DO214AB |
|
TPD4E001DRSRTexas Instruments |
TVS DIODE 5.5V 6SON |
|
SMCJ160CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 160V 287V DO214AB |
|
P6SMB7.5CA-M3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 6.4V 11.3V DO214AA |
|
MSMCJ26CARoving Networks / Microchip Technology |
TVS DIODE 26V 42.1V DO214AB |
|
1.5SMC16CA-E3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 13.6V 22.5V DO214AB |
|
MAP4KE13CAE3Roving Networks / Microchip Technology |
TVS DIODE 11.1V 18.2V DO204AL |
|
1.5KE62A-TBWickmann / Littelfuse |
TVS DIODE AXIAL LEAD - 1.5KE62A |