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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 200V |
| 电压 - 击穿（分钟）: | 222V |
| 电压 - 钳位（最大值）@ ipp: | 392V |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | 100000W (100kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AR, Axial |
| 供应商设备包: | Case 5A (DO-204AR) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MASMBG60ARoving Networks / Microchip Technology |
TVS DIODE 60V 96.8V DO215AA |
|
SMCJ24CA M6GTSC (Taiwan Semiconductor) |
TVS DIODE 24V 38.9V DO214AB |
|
P6KE82CA-E3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 70.1V 113V DO204AC |
|
MRT100KP280CARoving Networks / Microchip Technology |
TVS DIODE 280V 552V CASE 5A |
|
TLD6S30AHTSC (Taiwan Semiconductor) |
4600W,10V-43V SURFACE MOUNT TRAN |
|
MASMLJ8.5AE3Roving Networks / Microchip Technology |
TVS DIODE 8.5V 14.4V DO214AB |
|
SMCJ495AJ.W. Miller / Bourns |
TVS DIODE 495V 760V SMC |
|
SMBJ100CA-QJ.W. Miller / Bourns |
TVS DIODE AECQ |
|
ATV04A110J-HFComchip Technology |
TVS DIODE 11V 18.2V SMA |
|
MSMLG16ARoving Networks / Microchip Technology |
TVS DIODE 16V 26V DO215AB |
|
SMBJ17ATRSMC Diode Solutions |
TVS DIODE 17V 27.6V SMB |
|
SA24AGRochester Electronics |
TVS DIODE 24V 38.9V AXIAL |
|
SMBJ12CA-E3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 12V 19.9V DO214AA |
