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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 14V |
| 电压 - 击穿（分钟）: | 15.6V |
| 电压 - 钳位（最大值）@ ipp: | 23.2V |
| 电流 - 峰值脉冲 (10/1000µs): | 64.7A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB (SMCJ) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMF6V5TRROHM Semiconductor |
TRANSIENT VOLTAGE SUPPRESSOR - S |
|
MASMBJ5.0CARoving Networks / Microchip Technology |
TVS DIODE 5V 9.2V DO214AA |
|
1N6106USRoving Networks / Microchip Technology |
TVS DIODE 7.6V 15.23V B SQ-MELF |
|
DFLT8V5A-7Zetex Semiconductors (Diodes Inc.) |
TVS DIODE 8.5V 14.4V POWERDI 123 |
|
TPC13CAHM3/IVishay General Semiconductor – Diodes Division |
TVS DIODE 11.1V 18.2V TO277A |
|
ESD5Z2.5T1GSanyo Semiconductor/ON Semiconductor |
TVS DIODE 2.5V 10.9V SOD523 |
|
M5KP51AE3Roving Networks / Microchip Technology |
TVS DIODE 51V 82.4V DO204AR |
|
DRTR5V0U1LP-7BZetex Semiconductors (Diodes Inc.) |
TVS DIODE 5.5V 10V DFN1006-2 |
|
1KSMB15Wickmann / Littelfuse |
TVS DIODE 12.8V 22.26V DO214AA |
|
MSMBG7.5CAE3Roving Networks / Microchip Technology |
TVS DIODE 7.5V 12.9V DO215AA |
|
P6SMB36A-M3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 30.8V 49.9V DO214AA |
|
SMBJ8.0CA-F1-0000HF |
TVS DIODE 8V 13.6V SMB |
|
1.5KE440A R0GTSC (Taiwan Semiconductor) |
TVS DIODE 376V 602V DO201 |
