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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 24V (Max) |
| 电压 - 击穿（分钟）: | 27V |
| 电压 - 钳位（最大值）@ ipp: | 37V |
| 电流 - 峰值脉冲 (10/1000µs): | 2.5A (8/20µs) |
| 功率-峰值脉冲: | 110W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | 20pF @ 1MHz |
| 工作温度: | -40°C ~ 85°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 0402 (1006 Metric) |
| 供应商设备包: | 2-DFN (1x0.6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMCG130CA-E3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 130V 209V DO215AB |
|
SMCJ14CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 14V 25.8V DO214AB |
|
1.5SMC30A TR13 PBFREECentral Semiconductor |
TVS DIODE 25.6VWM 41.4VC SMC |
|
PESD5V0C1BSF315Rochester Electronics |
TVS DIODE |
|
TV30C640JB-GComchip Technology |
TVS DIODE 64V 103V DO214AB |
|
P6SMB68AJ.W. Miller / Bourns |
TVS DIODE 58.1V 92V DO214AA |
|
MSMBJ8.5AE3Roving Networks / Microchip Technology |
TVS DIODE 8.5V 14.4V DO214AA |
|
SMBJ6.0CAHR5GTSC (Taiwan Semiconductor) |
TVS DIODE 6V 10.3V DO214AA |
|
SMCG20A-HRAWickmann / Littelfuse |
TVS DIODE 20V 32.4V DO215AB |
|
MSMBJ170CARoving Networks / Microchip Technology |
TVS DIODE 170V 275V DO214AA |
|
1KSMB11CA M4GTSC (Taiwan Semiconductor) |
TVS DIODE 9.4V 15.6V DO214AA |
|
MASMBG15AE3Roving Networks / Microchip Technology |
TVS DIODE 15V 24.4V DO215AA |
|
SMAJ30CAQ-13-FZetex Semiconductors (Diodes Inc.) |
TRANSIENT VOLTAGE SUPPRESSOR,SMA |
