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| 类型 | 描述 |
|---|---|
| 系列: | SMCJ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 90V |
| 电压 - 击穿（分钟）: | 100V |
| 电压 - 钳位（最大值）@ ipp: | 146V |
| 电流 - 峰值脉冲 (10/1000µs): | 10.3A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB (SMCJ) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMCJ26CAHE3/57TVishay General Semiconductor – Diodes Division |
TVS DIODE 26V 42.1V DO214AB |
|
SMBJ24A-QJ.W. Miller / Bourns |
TVS DIODE 24V 38.9V SMB |
|
SMB10J26AHM4GTSC (Taiwan Semiconductor) |
TVS DIODE 26V 42.1V DO214AA |
|
MASMLJ110AE3Roving Networks / Microchip Technology |
TVS DIODE 110V 177V DO214AB |
|
1N6105USRoving Networks / Microchip Technology |
TVS DIODE 6.9V 14.07V B SQ-MELF |
|
SMCG100A-E3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 100V 162V DO215AB |
|
ESD131B1W0201E6327XTSA1IR (Infineon Technologies) |
TVS DIODE 5.5V 13V WLL-2-3 |
|
10BJ13APowerStor (Eaton) |
TVS DIODE 13V 21.5VC 1KW DO214AA |
|
SMF8V0A-M3-08Vishay General Semiconductor – Diodes Division |
TVS DIODE 8V 13.6V DO219AB |
|
P6SMB20AT3GRochester Electronics |
TVS, 600W, 17.1V UNIDIRECTIONAL |
|
5.0SMDJ170AJ.W. Miller / Bourns |
TVS DIODE 170V 275V DO214AB |
|
SMAJ20A-TRSTMicroelectronics |
TVS DIODE 20V 42.8V SMA |
|
SLD40U-017-BWickmann / Littelfuse |
TVS DIODE 40V 64.5V P600 |
