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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 17V |
| 电压 - 击穿（分钟）: | 18.9V |
| 电压 - 钳位（最大值）@ ipp: | 27.6V |
| 电流 - 峰值脉冲 (10/1000µs): | 106.6A |
| 功率-峰值脉冲: | 3000W (3kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SM15T24AYSTMicroelectronics |
TVS DIODE 20.5V 42.8V SMC |
|
1.5KE24A-E3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 20.5V 33.2V 1.5KE |
|
15KPA30ATRSMC Diode Solutions |
TVS DIODE 30V 50.7V P600 |
|
MXSMCJ130CARoving Networks / Microchip Technology |
TVS DIODE 130V 209V DO214AB |
|
VTVS12ASMF-HM3-18Vishay General Semiconductor – Diodes Division |
TVS DIODE 12.4V 20.1V DO219AB |
|
MSMLJ12CARoving Networks / Microchip Technology |
TVS DIODE 12V 19.9V DO214AB |
|
SMCJ54AWickmann / Littelfuse |
TVS DIODE 54V 87.1V DO214AB |
|
1.5KE120A-E3/51Vishay General Semiconductor – Diodes Division |
TVS DIODE 102V 165V 1.5KE |
|
SMBJ8.5AHR5GTSC (Taiwan Semiconductor) |
TVS DIODE 8.5V 14.4V DO214AA |
|
MSMCG58ARoving Networks / Microchip Technology |
TVS DIODE 58V 93.6V DO215AB |
|
PTVS9V0S1UR,115Nexperia |
TVS DIODE 9V 15.4V CFP3 |
|
SM6T24A-M3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 20.5V 33.2V DO214AA |
|
JANTXV1N5613Roving Networks / Microchip Technology |
TVS DIODE 175V 265V G AXIAL |
