English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/516 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 12.2V |
| 电压 - 击穿（分钟）: | 15.2V |
| 电压 - 钳位（最大值）@ ipp: | 22.3V |
| 电流 - 峰值脉冲 (10/1000µs): | 67.3A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | G, Axial |
| 供应商设备包: | C, Axial |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
M5KP85CARoving Networks / Microchip Technology |
TVS DIODE 85V 137V DO204AR |
|
MSMBG13CARoving Networks / Microchip Technology |
TVS DIODE 13V 21.5V DO215AA |
|
SMBG13A-M3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 13V 21.5V DO215AA |
|
SMBG45CA-M3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 45V 72.7V DO215AA |
|
SMBJ24CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AA |
|
TV04A180J-GComchip Technology |
TVS DIODE 18V 29.2V SMA |
|
SMCJ75AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 75V 121V DO214AB |
|
MASMBJ36CARoving Networks / Microchip Technology |
TVS DIODE 36V 58.1V DO214AA |
|
MXRT100KP45CAE3Roving Networks / Microchip Technology |
TVS DIODE 45V 88.5V CASE 5A |
|
P6SMB36A-QJ.W. Miller / Bourns |
TVS DIODE |
|
TPC16CAHM3/IVishay General Semiconductor – Diodes Division |
TVS DIODE 13.6V 22.5V TO277A |
|
MSMCJ11CAE3Roving Networks / Microchip Technology |
TVS DIODE 11V 18.2V DO214AB |
|
TV06B140J-HFComchip Technology |
TVS DIODE 14V 23.2V SMB |
