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| 类型 | 描述 |
|---|---|
| 系列: | 8.0SMDJ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 64V |
| 电压 - 击穿（分钟）: | 71.1V |
| 电压 - 钳位（最大值）@ ipp: | 103V |
| 电流 - 峰值脉冲 (10/1000µs): | 77.7A |
| 功率-峰值脉冲: | 8000W (8kW) |
| 电源线保护: | No |
| 应用: | Telecom |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB (SMCJ) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MXLSMBJ28AE3Roving Networks / Microchip Technology |
TVS DIODE 28V 45.4V DO214AA |
|
MSMBJ70ARoving Networks / Microchip Technology |
TVS DIODE 70V 113V DO214AA |
|
MASMBJSAC5.0Roving Networks / Microchip Technology |
TVS DIODE 5V 10V DO214AA |
|
1.5SMC51CA-M3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 43.6V 70.1V DO214AB |
|
VESD03A1B-HD1-GS08Vishay General Semiconductor – Diodes Division |
TVS DIODE 3.3V 9V LLP1006-2L |
|
15KPA30CAWickmann / Littelfuse |
TVS DIODE 30V 50.7V P600 |
|
SMBJ43CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AA |
|
SMBJ120CD-M3/IVishay General Semiconductor – Diodes Division |
TVS DIODE 120V 190V DO214AA |
|
MSMBG100ARoving Networks / Microchip Technology |
TVS DIODE 100V 162V DO215AA |
|
SMBJ48CA-M3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 48V 77.4V DO214AA |
|
MA1.5KE7.5CARoving Networks / Microchip Technology |
TVS DIODE 6.4V 11.3V DO204AR |
|
GSOT05-HE3-08Vishay General Semiconductor – Diodes Division |
TVS DIODE 5V 16V SOT23 |
|
P4SMA22CA R3GTSC (Taiwan Semiconductor) |
TVS DIODE 18.8V 30.6V DO214AC |
