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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 10.2V |
| 电压 - 击穿（分钟）: | 11.4V |
| 电压 - 钳位（最大值）@ ipp: | 16.7V |
| 电流 - 峰值脉冲 (10/1000µs): | 24A |
| 功率-峰值脉冲: | 400W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MXLSMCJ5.0CARoving Networks / Microchip Technology |
TVS DIODE 5V 9.2V DO214AB |
|
SMCG51CA-M3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 51V 82.4V DO215AB |
|
SMC30J26CASTMicroelectronics |
TVS DIODE 26V 42.1V SMC |
|
P6SMB100CAWickmann / Littelfuse |
TVS DIODE 85.5V 137V DO214AA |
|
MA1.5KE8.2ARoving Networks / Microchip Technology |
TVS DIODE 7.02V 12.1V DO204AR |
|
1N6279A-E3/51Vishay General Semiconductor – Diodes Division |
TVS DIODE 18.8V 30.6V 1.5KE |
|
MASMBG8.5ARoving Networks / Microchip Technology |
TVS DIODE 8.5V 14.4V DO215AA |
|
SMBG58AHE3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 58V 93.6V DO215AA |
|
MX5KP28CAE3Roving Networks / Microchip Technology |
TVS DIODE 28V 45.5V CASE 5A |
|
UPTB28/TR13Roving Networks / Microchip Technology |
TVS DIODE 28V 47.8V POWERMITE 1 |
|
SMBJ12CA-E3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 12V 19.9V DO214AA |
|
P6KE540A-E3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 459V 740V DO204AC |
|
MRT100KP150CAE3Roving Networks / Microchip Technology |
TVS DIODE 150V 296V CASE 5A |
