English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 85.5V |
| 电压 - 击穿（分钟）: | 95V |
| 电压 - 钳位（最大值）@ ipp: | 137V |
| 电流 - 峰值脉冲 (10/1000µs): | 11A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AD, Axial |
| 供应商设备包: | DO-201AD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMBJ180A-HFComchip Technology |
DIODE TVS 180V 600W SMB UNI-DIR |
|
5.0SMDJ58CA-QHJ.W. Miller / Bourns |
TVS DIODE |
|
MRT100KP48CAE3Roving Networks / Microchip Technology |
TVS DIODE 48V 94.3V CASE 5A |
|
DFLT15A-7Zetex Semiconductors (Diodes Inc.) |
TVS DIODE 15V 24.4V POWERDI 123 |
|
SMDJ51AHR7GTSC (Taiwan Semiconductor) |
TVS DIODE 51V 82.4V DO214AB |
|
MASMBJ13AE3Roving Networks / Microchip Technology |
TVS DIODE 13V 21.5V DO214AA |
|
SMC5K28CA-M3/IVishay General Semiconductor – Diodes Division |
5KW, 28V 5%,BIDIR,SMC TVS |
|
MXRT100KP130ARoving Networks / Microchip Technology |
TVS DIODE 130V 254V CASE 5A |
|
SM6T200AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE 600W DO214AA |
|
MSMCJLCE170AE3Roving Networks / Microchip Technology |
TVS DIODE 170V 275V DO214AB |
|
SMCJ12CA-E3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 12V 19.9V DO214AB |
|
1.5SMC27CA-E3/57TVishay General Semiconductor – Diodes Division |
TVS DIODE 23.1V 37.5V DO214AB |
|
MA5KP22CAE3Roving Networks / Microchip Technology |
TVS DIODE 22V 35.5V DO204AR |
